A Dual - Band , Multi - standard , Concurrent LNA Using a Dual - Resonant Matching Network

150104-8686-IJECS-IJENS © August 2015 IJENS I J E N S  Abstract— In this paper, a dual-band, multi-standard, concurrent, low noise amplifier operating in the 2.45/5.25 GHz bands is presented. The amplifier design is based on an ultra low noise PHEMT transistor connected in the common source configuration with inductive degeneration. The proposed amplifier stability is ensured using a series gate resistor and small inductive source degeneration in the form of etched transmission lines on the substrate. To enhance the fractional bandwidth, a capacitor is inserted between the gate and source terminals allowing fractional bandwidths of 52% and 15% at the lower and higher bands, respectively. The amplifier provides a voltage gain of 13.1 and 9.3 dB while achieving a corresponding noise figure of 2.4 and 2.1 dB at the lower and higher bands, respectively.